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The Effect of Multi-Layer Stacking Sequence of TiO(x) Active Layers on the Resistive-Switching Characteristics of Memristor Devices
The oxygen vacancies in the TiO(x) active layer play the key role in determining the electrical characteristics of TiO(x)–based memristors such as resistive-switching behaviour. In this paper, we investigated the effect of a multi-layer stacking sequence of TiO(x) active layers on the resistive-swit...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074605/ https://www.ncbi.nlm.nih.gov/pubmed/32019257 http://dx.doi.org/10.3390/mi11020154 |