Cargando…
Effect of Contact Plug Deposition Conditions on Junction Leakage and Contact Resistance in Multilevel CMOS Logic Interconnection Device
Here, we developed the optimal conditions in terms of physical and electrical characteristics of the barrier and tungsten (W) deposition process of a contact module, which is the segment connecting the device and the multi-layer metallization (MLM) metal line in the development of 100 nm-class logic...
Autores principales: | Cui, Yinhua, Jeong, Jeong Yeul, Gao, Yuan, Pyo, Sung Gyu |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074618/ https://www.ncbi.nlm.nih.gov/pubmed/32041270 http://dx.doi.org/10.3390/mi11020170 |
Ejemplares similares
-
Process Optimization of Via Plug Multilevel Interconnections in CMOS Logic Devices
por: Cui, Yinhua, et al.
Publicado: (2019) -
VLSI and post-CMOS electronics: devices, circuits and interconnects
por: Dhiman, Rohit, et al.
Publicado: (2019) -
Contact Engineering Approach to Improve the Linearity of Multilevel Memristive Devices
por: Andreeva, Natalia, et al.
Publicado: (2021) -
Contacts, junctions, emitters
por: Willardson, RK, et al.
Publicado: (1981) -
Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents
por: Zhou, Yaoqiang, et al.
Publicado: (2023)