Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation

As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators. In this work, we present the quantum enhancement of a 2D Multi-Subband Ensemble Monte Carlo (MS-EMC) simul...

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Detalles Bibliográficos
Autores principales: Medina-Bailon, Cristina, Carrillo-Nunez, Hamilton, Lee, Jaehyun, Sampedro, Carlos, Padilla, Jose Luis, Donetti, Luca, Georgiev, Vihar, Gamiz, Francisco, Asenov, Asen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074633/
https://www.ncbi.nlm.nih.gov/pubmed/32079085
http://dx.doi.org/10.3390/mi11020204

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074633/
https://www.ncbi.nlm.nih.gov/pubmed/32079085
http://dx.doi.org/10.3390/mi11020204

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