A Novel Germanium-Around-Source Gate-All-Around Tunnelling Field-Effect Transistor for Low-Power Applications

This paper presents a germanium-around-source gate-all-around tunnelling field-effect transistor (GAS GAA TFET). The electrical characteristics of the device were studied and compared with those of silicon gate-all-around and germanium-based-source gate-all-around tunnel field-effect transistors. Fu...

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Detalles Bibliográficos
Autores principales: Han, Ke, Long, Shanglin, Deng, Zhongliang, Zhang, Yannan, Li, Jiawei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074645/
https://www.ncbi.nlm.nih.gov/pubmed/32028719
http://dx.doi.org/10.3390/mi11020164

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074645/
https://www.ncbi.nlm.nih.gov/pubmed/32028719
http://dx.doi.org/10.3390/mi11020164

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