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A Novel Germanium-Around-Source Gate-All-Around Tunnelling Field-Effect Transistor for Low-Power Applications
This paper presents a germanium-around-source gate-all-around tunnelling field-effect transistor (GAS GAA TFET). The electrical characteristics of the device were studied and compared with those of silicon gate-all-around and germanium-based-source gate-all-around tunnel field-effect transistors. Fu...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074645/ https://www.ncbi.nlm.nih.gov/pubmed/32028719 http://dx.doi.org/10.3390/mi11020164 |