Influence of Illumination on Porous Silicon Formed by Photo-Assisted Etching of p-Type Si with a Different Doping Level

The influence of illumination intensity and p-type silicon doping level on the dissolution rate of Si and total current by photo-assisted etching was studied. The impact of etching duration, illumination intensity, and wafer doping level on the etching process was investigated using scanning electro...

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Detalles Bibliográficos
Autores principales: Volovlikova, Olga, Gavrilov, Sergey, Lazarenko, Petr
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074670/
https://www.ncbi.nlm.nih.gov/pubmed/32075147
http://dx.doi.org/10.3390/mi11020199

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074670/
https://www.ncbi.nlm.nih.gov/pubmed/32075147
http://dx.doi.org/10.3390/mi11020199

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