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A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core–Insulator
Ultra-low power and high-performance logical devices have been the driving force for the continued scaling of complementary metal oxide semiconductor field effect transistors which greatly enable electronic devices such as smart phones to be energy-efficient and portable. In the pursuit of smaller a...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074695/ https://www.ncbi.nlm.nih.gov/pubmed/32098218 http://dx.doi.org/10.3390/mi11020223 |