Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications

Copper-metallized gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using a Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications. With a thick copper metallization layer of 6.8 μm adopted, the device exhibited a high output power density of 8.2 W/...

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Detalles Bibliográficos
Autores principales: Lin, Y. C., Chen, S. H., Lee, P. H., Lai, K. H., Huang, T. J., Chang, Edward Y., Hsu, Heng-Tung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074802/
https://www.ncbi.nlm.nih.gov/pubmed/32098124
http://dx.doi.org/10.3390/mi11020222

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074802/
https://www.ncbi.nlm.nih.gov/pubmed/32098124
http://dx.doi.org/10.3390/mi11020222

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