Current Transport Mechanism in Palladium Schottky Contact on Si-Based Freestanding GaN

In this study, the charge transport mechanism of Pd/Si-based FS-GaN Schottky diodes was investigated. A temperature-dependent current–voltage analysis revealed that the I-V characteristics of the diodes show a good rectifying behavior with a large ratio of 10(3)–10(5) at the forward to reverse curre...

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Detalles Bibliográficos
Autores principales: Lee, Moonsang, Ahn, Chang Wan, Vu, Thi Kim Oanh, Lee, Hyun Uk, Jeong, Yesul, Hahm, Myung Gwan, Kim, Eun Kyu, Park, Sungsoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7075217/
https://www.ncbi.nlm.nih.gov/pubmed/32050595
http://dx.doi.org/10.3390/nano10020297

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7075217/
https://www.ncbi.nlm.nih.gov/pubmed/32050595
http://dx.doi.org/10.3390/nano10020297

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