Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

GaAs has been demonstrated to be a promising material for manufacturing semiconductor light-emitting devices and integrated circuits. It has been widely used in the field of aerospace, due to its high electron mobility and wide band gap. In this study, the structural and photoelectric characteristic...

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Detalles Bibliográficos
Autores principales: Shen, Ye, Fang, Xuan, Ding, Xiang, Xiao, Haiyan, Xiang, Xia, Yang, Guixia, Jiang, Ming, Zu, Xiaotao, Qiao, Liang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7075233/
https://www.ncbi.nlm.nih.gov/pubmed/32079269
http://dx.doi.org/10.3390/nano10020340

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7075233/
https://www.ncbi.nlm.nih.gov/pubmed/32079269
http://dx.doi.org/10.3390/nano10020340

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