Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction

The microstructure of ferroelectric hafnium oxide plays a vital role for its application, e.g., non-volatile memories. In this study, transmission Kikuchi diffraction and scanning transmission electron microscopy STEM techniques are used to compare the crystallographic phase and orientation of Si an...

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Detalles Bibliográficos
Autores principales: Lederer, Maximilian, Kämpfe, Thomas, Vogel, Norman, Utess, Dirk, Volkmann, Beate, Ali, Tarek, Olivo, Ricardo, Müller, Johannes, Beyer, Sven, Trentzsch, Martin, Seidel, Konrad, Eng, Lukas M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7075299/
https://www.ncbi.nlm.nih.gov/pubmed/32098415
http://dx.doi.org/10.3390/nano10020384

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7075299/
https://www.ncbi.nlm.nih.gov/pubmed/32098415
http://dx.doi.org/10.3390/nano10020384

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