Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures

Practical implementation of many quantum information and sensing technologies relies on the ability to efficiently generate and manipulate single-photon photons under ambient conditions. Color centers in diamond, such as the silicon-vacancy (SiV) center, have recently emerged as extremely attractive...

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Detalles Bibliográficos
Autores principales: Khramtsov, Igor A., Fedyanin, Dmitry Yu.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7075311/
https://www.ncbi.nlm.nih.gov/pubmed/32092962
http://dx.doi.org/10.3390/nano10020361

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7075311/
https://www.ncbi.nlm.nih.gov/pubmed/32092962
http://dx.doi.org/10.3390/nano10020361

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