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Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures
Practical implementation of many quantum information and sensing technologies relies on the ability to efficiently generate and manipulate single-photon photons under ambient conditions. Color centers in diamond, such as the silicon-vacancy (SiV) center, have recently emerged as extremely attractive...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7075311/ https://www.ncbi.nlm.nih.gov/pubmed/32092962 http://dx.doi.org/10.3390/nano10020361 |
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author | Khramtsov, Igor A. Fedyanin, Dmitry Yu. |
author_facet | Khramtsov, Igor A. Fedyanin, Dmitry Yu. |
author_sort | Khramtsov, Igor A. |
collection | PubMed |
description | Practical implementation of many quantum information and sensing technologies relies on the ability to efficiently generate and manipulate single-photon photons under ambient conditions. Color centers in diamond, such as the silicon-vacancy (SiV) center, have recently emerged as extremely attractive single-photon emitters for room temperature applications. However, diamond is a material at the interface between insulators and semiconductors. Therefore, it is extremely difficult to excite color centers electrically and consequently develop bright and efficient electrically driven single-photon sources. Here, using a comprehensive theoretical approach, we propose and numerically demonstrate a concept of a single-photon emitting diode (SPED) based on a SiV center in a nanoscale AlN/diamond heterojunction device. We find that in spite of the high potential barrier for electrons in AlN at the AlN/diamond heterojunction, under forward bias, electrons can be efficiently injected from AlN into the i-type diamond region of the n-AlN/i-diamond/p-diamond heterostructure, which ensures bright single-photon electroluminescence (SPEL) of the SiV center located in the i-type diamond region. The maximum SPEL rate is more than five times higher than what can be achieved in SPEDs based on diamond p-i-n diodes. Despite the high density of defects at the AlN/diamond interface, the SPEL rate can reach about 4 Mcps, which coincides with the limit imposed by the quantum efficiency and the lifetime of the shelving state of the SiV center. These findings provide new insights into the development of bright room-temperature electrically driven single-photon sources for quantum information technologies and, we believe, stimulate further research in this area. |
format | Online Article Text |
id | pubmed-7075311 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-70753112020-03-20 Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures Khramtsov, Igor A. Fedyanin, Dmitry Yu. Nanomaterials (Basel) Article Practical implementation of many quantum information and sensing technologies relies on the ability to efficiently generate and manipulate single-photon photons under ambient conditions. Color centers in diamond, such as the silicon-vacancy (SiV) center, have recently emerged as extremely attractive single-photon emitters for room temperature applications. However, diamond is a material at the interface between insulators and semiconductors. Therefore, it is extremely difficult to excite color centers electrically and consequently develop bright and efficient electrically driven single-photon sources. Here, using a comprehensive theoretical approach, we propose and numerically demonstrate a concept of a single-photon emitting diode (SPED) based on a SiV center in a nanoscale AlN/diamond heterojunction device. We find that in spite of the high potential barrier for electrons in AlN at the AlN/diamond heterojunction, under forward bias, electrons can be efficiently injected from AlN into the i-type diamond region of the n-AlN/i-diamond/p-diamond heterostructure, which ensures bright single-photon electroluminescence (SPEL) of the SiV center located in the i-type diamond region. The maximum SPEL rate is more than five times higher than what can be achieved in SPEDs based on diamond p-i-n diodes. Despite the high density of defects at the AlN/diamond interface, the SPEL rate can reach about 4 Mcps, which coincides with the limit imposed by the quantum efficiency and the lifetime of the shelving state of the SiV center. These findings provide new insights into the development of bright room-temperature electrically driven single-photon sources for quantum information technologies and, we believe, stimulate further research in this area. MDPI 2020-02-19 /pmc/articles/PMC7075311/ /pubmed/32092962 http://dx.doi.org/10.3390/nano10020361 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Khramtsov, Igor A. Fedyanin, Dmitry Yu. Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures |
title | Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures |
title_full | Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures |
title_fullStr | Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures |
title_full_unstemmed | Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures |
title_short | Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures |
title_sort | bright single-photon emitting diodes based on the silicon-vacancy center in aln/diamond heterostructures |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7075311/ https://www.ncbi.nlm.nih.gov/pubmed/32092962 http://dx.doi.org/10.3390/nano10020361 |
work_keys_str_mv | AT khramtsovigora brightsinglephotonemittingdiodesbasedonthesiliconvacancycenterinalndiamondheterostructures AT fedyanindmitryyu brightsinglephotonemittingdiodesbasedonthesiliconvacancycenterinalndiamondheterostructures |