Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing

Continuous room temperature nanowire lasing from silicon-integrated optoelectronic elements requires careful optimisation of both the lasing cavity Q-factor and population inversion conditions. We apply time-gated optical interferometry to the lasing emission from high-quality GaAsP/GaAs quantum wel...

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Detalles Bibliográficos
Autores principales: Skalsky, Stefan, Zhang, Yunyan, Alanis, Juan Arturo, Fonseka, H. Aruni, Sanchez, Ana M., Liu, Huiyun, Parkinson, Patrick
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7078256/
https://www.ncbi.nlm.nih.gov/pubmed/32194957
http://dx.doi.org/10.1038/s41377-020-0279-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7078256/
https://www.ncbi.nlm.nih.gov/pubmed/32194957
http://dx.doi.org/10.1038/s41377-020-0279-y

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