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Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing
Continuous room temperature nanowire lasing from silicon-integrated optoelectronic elements requires careful optimisation of both the lasing cavity Q-factor and population inversion conditions. We apply time-gated optical interferometry to the lasing emission from high-quality GaAsP/GaAs quantum wel...
Autores principales: | Skalsky, Stefan, Zhang, Yunyan, Alanis, Juan Arturo, Fonseka, H. Aruni, Sanchez, Ana M., Liu, Huiyun, Parkinson, Patrick |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7078256/ https://www.ncbi.nlm.nih.gov/pubmed/32194957 http://dx.doi.org/10.1038/s41377-020-0279-y |
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