Sub-nanosecond memristor based on ferroelectric tunnel junction

Next-generation non-volatile memories with ultrafast speed, low power consumption, and high density are highly desired in the era of big data. Here, we report a high performance memristor based on a Ag/BaTiO(3)/Nb:SrTiO(3) ferroelectric tunnel junction (FTJ) with the fastest operation speed (600 ps)...

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Detalles Bibliográficos
Autores principales: Ma, Chao, Luo, Zhen, Huang, Weichuan, Zhao, Letian, Chen, Qiaoling, Lin, Yue, Liu, Xiang, Chen, Zhiwei, Liu, Chuanchuan, Sun, Haoyang, Jin, Xi, Yin, Yuewei, Li, Xiaoguang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7080735/
https://www.ncbi.nlm.nih.gov/pubmed/32188861
http://dx.doi.org/10.1038/s41467-020-15249-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7080735/
https://www.ncbi.nlm.nih.gov/pubmed/32188861
http://dx.doi.org/10.1038/s41467-020-15249-1

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