Giant renormalization of dopant impurity levels in 2D semiconductor MoS(2)

Substitutional doping in 2D semiconductor MoS(2) was investigated by charge transition level (CTL) calculations for Nitrogen group (N, P, As, Sb) and Halogen group (F, Cl, Br, I) dopants at the S site of monolayer MoS(2). Both n-type and p-type dopant levels are calculated to be deep mid-gap states...

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Detalles Bibliográficos
Autores principales: Hwang, Jeongwoon, Zhang, Chenxi, Kim, Yong-Sung, Wallace, Robert M., Cho, Kyeongjae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7080777/
https://www.ncbi.nlm.nih.gov/pubmed/32188874
http://dx.doi.org/10.1038/s41598-020-61675-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7080777/
https://www.ncbi.nlm.nih.gov/pubmed/32188874
http://dx.doi.org/10.1038/s41598-020-61675-y

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