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Giant renormalization of dopant impurity levels in 2D semiconductor MoS(2)
Substitutional doping in 2D semiconductor MoS(2) was investigated by charge transition level (CTL) calculations for Nitrogen group (N, P, As, Sb) and Halogen group (F, Cl, Br, I) dopants at the S site of monolayer MoS(2). Both n-type and p-type dopant levels are calculated to be deep mid-gap states...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7080777/ https://www.ncbi.nlm.nih.gov/pubmed/32188874 http://dx.doi.org/10.1038/s41598-020-61675-y |