Study of Si and Ge Atoms Termination Using H-Dilution in SiGe:H Alloys Deposited by Radio Frequency (13.56 MHz) Plasma Discharge at Low Temperature

In this work, we present the study of the atomic composition in amorphous Si(X)Ge(Y):H(Z) films deposited by radio frequency (RF—13.56 MHz) plasma discharge at low deposition temperature. A study and control of Si and Ge atoms termination using H-dilution in SiGe:H alloys deposited by RF plasma disc...

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Detalles Bibliográficos
Autores principales: Cosme, Ismael, Kosarev, Andrey, Zarate-Galvez, Saraí, Martinez, Hiram E., Mansurova, Svetlana, Kudriavtsev, Yuri
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7084415/
https://www.ncbi.nlm.nih.gov/pubmed/32110866
http://dx.doi.org/10.3390/ma13051045

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7084415/
https://www.ncbi.nlm.nih.gov/pubmed/32110866
http://dx.doi.org/10.3390/ma13051045

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