Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays

Selective area thermal etching (SATE) of gallium nitride is a simple subtractive process for creating novel device architectures and improving the structural and optical quality of III-nitride-based devices. In contrast to plasma etching, it allows, for example, the creation of enclosed features wit...

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Detalles Bibliográficos
Autores principales: Coulon, Pierre-Marie, Feng, Peng, Damilano, Benjamin, Vézian, Stéphane, Wang, Tao, Shields, Philip A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7101372/
https://www.ncbi.nlm.nih.gov/pubmed/32221397
http://dx.doi.org/10.1038/s41598-020-62539-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7101372/
https://www.ncbi.nlm.nih.gov/pubmed/32221397
http://dx.doi.org/10.1038/s41598-020-62539-1

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