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Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays
Selective area thermal etching (SATE) of gallium nitride is a simple subtractive process for creating novel device architectures and improving the structural and optical quality of III-nitride-based devices. In contrast to plasma etching, it allows, for example, the creation of enclosed features wit...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7101372/ https://www.ncbi.nlm.nih.gov/pubmed/32221397 http://dx.doi.org/10.1038/s41598-020-62539-1 |