High efficiency and stability of ink-jet printed quantum dot light emitting diodes

The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligand...

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Autores principales: Xiang, Chaoyu, Wu, Longjia, Lu, Zizhe, Li, Menglin, Wen, Yanwei, Yang, Yixing, Liu, Wenyong, Zhang, Ting, Cao, Weiran, Tsang, Sai-Wing, Shan, Bin, Yan, Xiaolin, Qian, Lei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7118149/
https://www.ncbi.nlm.nih.gov/pubmed/32242016
http://dx.doi.org/10.1038/s41467-020-15481-9
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author Xiang, Chaoyu
Wu, Longjia
Lu, Zizhe
Li, Menglin
Wen, Yanwei
Yang, Yixing
Liu, Wenyong
Zhang, Ting
Cao, Weiran
Tsang, Sai-Wing
Shan, Bin
Yan, Xiaolin
Qian, Lei
author_facet Xiang, Chaoyu
Wu, Longjia
Lu, Zizhe
Li, Menglin
Wen, Yanwei
Yang, Yixing
Liu, Wenyong
Zhang, Ting
Cao, Weiran
Tsang, Sai-Wing
Shan, Bin
Yan, Xiaolin
Qian, Lei
author_sort Xiang, Chaoyu
collection PubMed
description The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.
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spelling pubmed-71181492020-04-06 High efficiency and stability of ink-jet printed quantum dot light emitting diodes Xiang, Chaoyu Wu, Longjia Lu, Zizhe Li, Menglin Wen, Yanwei Yang, Yixing Liu, Wenyong Zhang, Ting Cao, Weiran Tsang, Sai-Wing Shan, Bin Yan, Xiaolin Qian, Lei Nat Commun Article The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry. Nature Publishing Group UK 2020-04-02 /pmc/articles/PMC7118149/ /pubmed/32242016 http://dx.doi.org/10.1038/s41467-020-15481-9 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Xiang, Chaoyu
Wu, Longjia
Lu, Zizhe
Li, Menglin
Wen, Yanwei
Yang, Yixing
Liu, Wenyong
Zhang, Ting
Cao, Weiran
Tsang, Sai-Wing
Shan, Bin
Yan, Xiaolin
Qian, Lei
High efficiency and stability of ink-jet printed quantum dot light emitting diodes
title High efficiency and stability of ink-jet printed quantum dot light emitting diodes
title_full High efficiency and stability of ink-jet printed quantum dot light emitting diodes
title_fullStr High efficiency and stability of ink-jet printed quantum dot light emitting diodes
title_full_unstemmed High efficiency and stability of ink-jet printed quantum dot light emitting diodes
title_short High efficiency and stability of ink-jet printed quantum dot light emitting diodes
title_sort high efficiency and stability of ink-jet printed quantum dot light emitting diodes
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7118149/
https://www.ncbi.nlm.nih.gov/pubmed/32242016
http://dx.doi.org/10.1038/s41467-020-15481-9
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