Layer-resolved ultrafast extreme ultraviolet measurement of hole transport in a Ni-TiO(2)-Si photoanode

Metal oxide semiconductor junctions are central to most electronic and optoelectronic devices, but ultrafast measurements of carrier transport have been limited to device-average measurements. Here, charge transport and recombination kinetics in each layer of a Ni-TiO(2)-Si junction is measured usin...

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Detalles Bibliográficos
Autores principales: Cushing, Scott K., Porter, Ilana J., de Roulet, Bethany R., Lee, Angela, Marsh, Brett M., Szoke, Szilard, Vaida, Mihai E., Leone, Stephen R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2020
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7124930/
https://www.ncbi.nlm.nih.gov/pubmed/32284972
http://dx.doi.org/10.1126/sciadv.aay6650

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7124930/
https://www.ncbi.nlm.nih.gov/pubmed/32284972
http://dx.doi.org/10.1126/sciadv.aay6650

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