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Layer-resolved ultrafast extreme ultraviolet measurement of hole transport in a Ni-TiO(2)-Si photoanode
Metal oxide semiconductor junctions are central to most electronic and optoelectronic devices, but ultrafast measurements of carrier transport have been limited to device-average measurements. Here, charge transport and recombination kinetics in each layer of a Ni-TiO(2)-Si junction is measured usin...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Association for the Advancement of Science
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7124930/ https://www.ncbi.nlm.nih.gov/pubmed/32284972 http://dx.doi.org/10.1126/sciadv.aay6650 |