Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures

We have demonstrated that with e-beam deposition of a thin Al(2)O(3) layer before atomic layer deposition, a uniform Al(2)O(3) film can be obtained on WSe(2)/sapphire samples. Device performances are observed for WSe(2) top-gate transistors by using oxide stacks as the gate dielectric. By using ther...

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Detalles Bibliográficos
Autores principales: Zhang, Yu-Wei, Li, Jun-Yan, Wu, Chao-Hsin, Chang, Chiao-Yun, Chang, Shu-Wei, Shih, Min-Hsiung, Lin, Shih-Yen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7136248/
https://www.ncbi.nlm.nih.gov/pubmed/32249852
http://dx.doi.org/10.1038/s41598-020-63098-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7136248/
https://www.ncbi.nlm.nih.gov/pubmed/32249852
http://dx.doi.org/10.1038/s41598-020-63098-1

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