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Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures
We have demonstrated that with e-beam deposition of a thin Al(2)O(3) layer before atomic layer deposition, a uniform Al(2)O(3) film can be obtained on WSe(2)/sapphire samples. Device performances are observed for WSe(2) top-gate transistors by using oxide stacks as the gate dielectric. By using ther...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7136248/ https://www.ncbi.nlm.nih.gov/pubmed/32249852 http://dx.doi.org/10.1038/s41598-020-63098-1 |