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A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors

The chemical, physical, and electrical properties of the atomic layer deposited Hf(0.5)Zr(0.5)O(2) thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precursors strongly affects the residual C concentration,...

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Autores principales: Kim, Baek Su, Hyun, Seung Dam, Moon, Taehwan, Do Kim, Keum, Lee, Young Hwan, Park, Hyeon Woo, Lee, Yong Bin, Roh, Jangho, Kim, Beom Yong, Kim, Ho Hyun, Park, Min Hyuk, Hwang, Cheol Seong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7138889/
https://www.ncbi.nlm.nih.gov/pubmed/32266598
http://dx.doi.org/10.1186/s11671-020-03301-4
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author Kim, Baek Su
Hyun, Seung Dam
Moon, Taehwan
Do Kim, Keum
Lee, Young Hwan
Park, Hyeon Woo
Lee, Yong Bin
Roh, Jangho
Kim, Beom Yong
Kim, Ho Hyun
Park, Min Hyuk
Hwang, Cheol Seong
author_facet Kim, Baek Su
Hyun, Seung Dam
Moon, Taehwan
Do Kim, Keum
Lee, Young Hwan
Park, Hyeon Woo
Lee, Yong Bin
Roh, Jangho
Kim, Beom Yong
Kim, Ho Hyun
Park, Min Hyuk
Hwang, Cheol Seong
author_sort Kim, Baek Su
collection PubMed
description The chemical, physical, and electrical properties of the atomic layer deposited Hf(0.5)Zr(0.5)O(2) thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precursors strongly affects the residual C concentration, grain size, and the resulting ferroelectric properties. Depositing Hf(0.5)Zr(0.5)O(2) films with the TDMA precursors results in lower C concentration and slightly larger grain size. These findings are beneficial to grow more ferroelectric-phase-dominant film, which mitigates its wake-up effect. From the wake-up test of the TDMA-Hf(0.5)Zr(0.5)O(2) film with a 2.8 MV/cm cycling field, the adverse wake-up effect was well suppressed up to 10(5) cycles, with a reasonably high double remanent polarization value of ~40 μC/cm(2). The film also showed reliable switching up to 10(9) cycles with the 2.5 MV/cm cycling field without involving the wake-up effect but with the typical fatigue behavior.
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spelling pubmed-71388892020-04-15 A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors Kim, Baek Su Hyun, Seung Dam Moon, Taehwan Do Kim, Keum Lee, Young Hwan Park, Hyeon Woo Lee, Yong Bin Roh, Jangho Kim, Beom Yong Kim, Ho Hyun Park, Min Hyuk Hwang, Cheol Seong Nanoscale Res Lett Nano Express The chemical, physical, and electrical properties of the atomic layer deposited Hf(0.5)Zr(0.5)O(2) thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precursors strongly affects the residual C concentration, grain size, and the resulting ferroelectric properties. Depositing Hf(0.5)Zr(0.5)O(2) films with the TDMA precursors results in lower C concentration and slightly larger grain size. These findings are beneficial to grow more ferroelectric-phase-dominant film, which mitigates its wake-up effect. From the wake-up test of the TDMA-Hf(0.5)Zr(0.5)O(2) film with a 2.8 MV/cm cycling field, the adverse wake-up effect was well suppressed up to 10(5) cycles, with a reasonably high double remanent polarization value of ~40 μC/cm(2). The film also showed reliable switching up to 10(9) cycles with the 2.5 MV/cm cycling field without involving the wake-up effect but with the typical fatigue behavior. Springer US 2020-04-07 /pmc/articles/PMC7138889/ /pubmed/32266598 http://dx.doi.org/10.1186/s11671-020-03301-4 Text en © The Author(s) 2020 Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Nano Express
Kim, Baek Su
Hyun, Seung Dam
Moon, Taehwan
Do Kim, Keum
Lee, Young Hwan
Park, Hyeon Woo
Lee, Yong Bin
Roh, Jangho
Kim, Beom Yong
Kim, Ho Hyun
Park, Min Hyuk
Hwang, Cheol Seong
A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors
title A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors
title_full A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors
title_fullStr A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors
title_full_unstemmed A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors
title_short A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors
title_sort comparative study on the ferroelectric performances in atomic layer deposited hf(0.5)zr(0.5)o(2) thin films using tetrakis(ethylmethylamino) and tetrakis(dimethylamino) precursors
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7138889/
https://www.ncbi.nlm.nih.gov/pubmed/32266598
http://dx.doi.org/10.1186/s11671-020-03301-4
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