Cargando…
A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors
The chemical, physical, and electrical properties of the atomic layer deposited Hf(0.5)Zr(0.5)O(2) thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precursors strongly affects the residual C concentration,...
Autores principales: | , , , , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7138889/ https://www.ncbi.nlm.nih.gov/pubmed/32266598 http://dx.doi.org/10.1186/s11671-020-03301-4 |
_version_ | 1783518643592626176 |
---|---|
author | Kim, Baek Su Hyun, Seung Dam Moon, Taehwan Do Kim, Keum Lee, Young Hwan Park, Hyeon Woo Lee, Yong Bin Roh, Jangho Kim, Beom Yong Kim, Ho Hyun Park, Min Hyuk Hwang, Cheol Seong |
author_facet | Kim, Baek Su Hyun, Seung Dam Moon, Taehwan Do Kim, Keum Lee, Young Hwan Park, Hyeon Woo Lee, Yong Bin Roh, Jangho Kim, Beom Yong Kim, Ho Hyun Park, Min Hyuk Hwang, Cheol Seong |
author_sort | Kim, Baek Su |
collection | PubMed |
description | The chemical, physical, and electrical properties of the atomic layer deposited Hf(0.5)Zr(0.5)O(2) thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precursors strongly affects the residual C concentration, grain size, and the resulting ferroelectric properties. Depositing Hf(0.5)Zr(0.5)O(2) films with the TDMA precursors results in lower C concentration and slightly larger grain size. These findings are beneficial to grow more ferroelectric-phase-dominant film, which mitigates its wake-up effect. From the wake-up test of the TDMA-Hf(0.5)Zr(0.5)O(2) film with a 2.8 MV/cm cycling field, the adverse wake-up effect was well suppressed up to 10(5) cycles, with a reasonably high double remanent polarization value of ~40 μC/cm(2). The film also showed reliable switching up to 10(9) cycles with the 2.5 MV/cm cycling field without involving the wake-up effect but with the typical fatigue behavior. |
format | Online Article Text |
id | pubmed-7138889 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Springer US |
record_format | MEDLINE/PubMed |
spelling | pubmed-71388892020-04-15 A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors Kim, Baek Su Hyun, Seung Dam Moon, Taehwan Do Kim, Keum Lee, Young Hwan Park, Hyeon Woo Lee, Yong Bin Roh, Jangho Kim, Beom Yong Kim, Ho Hyun Park, Min Hyuk Hwang, Cheol Seong Nanoscale Res Lett Nano Express The chemical, physical, and electrical properties of the atomic layer deposited Hf(0.5)Zr(0.5)O(2) thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precursors strongly affects the residual C concentration, grain size, and the resulting ferroelectric properties. Depositing Hf(0.5)Zr(0.5)O(2) films with the TDMA precursors results in lower C concentration and slightly larger grain size. These findings are beneficial to grow more ferroelectric-phase-dominant film, which mitigates its wake-up effect. From the wake-up test of the TDMA-Hf(0.5)Zr(0.5)O(2) film with a 2.8 MV/cm cycling field, the adverse wake-up effect was well suppressed up to 10(5) cycles, with a reasonably high double remanent polarization value of ~40 μC/cm(2). The film also showed reliable switching up to 10(9) cycles with the 2.5 MV/cm cycling field without involving the wake-up effect but with the typical fatigue behavior. Springer US 2020-04-07 /pmc/articles/PMC7138889/ /pubmed/32266598 http://dx.doi.org/10.1186/s11671-020-03301-4 Text en © The Author(s) 2020 Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Nano Express Kim, Baek Su Hyun, Seung Dam Moon, Taehwan Do Kim, Keum Lee, Young Hwan Park, Hyeon Woo Lee, Yong Bin Roh, Jangho Kim, Beom Yong Kim, Ho Hyun Park, Min Hyuk Hwang, Cheol Seong A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors |
title | A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors |
title_full | A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors |
title_fullStr | A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors |
title_full_unstemmed | A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors |
title_short | A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf(0.5)Zr(0.5)O(2) Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors |
title_sort | comparative study on the ferroelectric performances in atomic layer deposited hf(0.5)zr(0.5)o(2) thin films using tetrakis(ethylmethylamino) and tetrakis(dimethylamino) precursors |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7138889/ https://www.ncbi.nlm.nih.gov/pubmed/32266598 http://dx.doi.org/10.1186/s11671-020-03301-4 |
work_keys_str_mv | AT kimbaeksu acomparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT hyunseungdam acomparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT moontaehwan acomparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT dokimkeum acomparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT leeyounghwan acomparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT parkhyeonwoo acomparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT leeyongbin acomparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT rohjangho acomparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT kimbeomyong acomparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT kimhohyun acomparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT parkminhyuk acomparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT hwangcheolseong acomparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT kimbaeksu comparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT hyunseungdam comparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT moontaehwan comparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT dokimkeum comparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT leeyounghwan comparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT parkhyeonwoo comparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT leeyongbin comparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT rohjangho comparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT kimbeomyong comparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT kimhohyun comparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT parkminhyuk comparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors AT hwangcheolseong comparativestudyontheferroelectricperformancesinatomiclayerdepositedhf05zr05o2thinfilmsusingtetrakisethylmethylaminoandtetrakisdimethylaminoprecursors |