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Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices
Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article. The miniaturized devices were developed at the University of South Carolina (UofSC) on 8 × 8 mm 4H-SiC epitaxial layer wafer...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7142523/ https://www.ncbi.nlm.nih.gov/pubmed/32121162 http://dx.doi.org/10.3390/mi11030254 |