Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing

Controlled doping with an effective carrier concentration higher than 10(20) cm(−3) is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts with low specific resistance. We have studied the e...

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Detalles Bibliográficos
Autores principales: Prucnal, Slawomir, Żuk, Jerzy, Hübner, René, Duan, Juanmei, Wang, Mao, Pyszniak, Krzysztof, Drozdziel, Andrzej, Turek, Marcin, Zhou, Shengqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7143048/
https://www.ncbi.nlm.nih.gov/pubmed/32244923
http://dx.doi.org/10.3390/ma13061408

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7143048/
https://www.ncbi.nlm.nih.gov/pubmed/32244923
http://dx.doi.org/10.3390/ma13061408

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