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Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing
Controlled doping with an effective carrier concentration higher than 10(20) cm(−3) is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts with low specific resistance. We have studied the e...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7143048/ https://www.ncbi.nlm.nih.gov/pubmed/32244923 http://dx.doi.org/10.3390/ma13061408 |