Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C

This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the p...

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Detalles Bibliográficos
Autores principales: Smiljanić, Milče M., Lazić, Žarko, Jović, Vesna, Radjenović, Branislav, Radmilović-Radjenović, Marija
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7143182/
https://www.ncbi.nlm.nih.gov/pubmed/32121024
http://dx.doi.org/10.3390/mi11030253

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7143182/
https://www.ncbi.nlm.nih.gov/pubmed/32121024
http://dx.doi.org/10.3390/mi11030253

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