Physical Properties of XN (X = B, Al, Ga, In) in the Pm−3n phase: First-Principles Calculations

Three direct semiconductor materials and one indirect semiconductor material, Pm−3n XN (X = B, Al, Ga, In), are investigated in our work, employing density functional theory (DFT), where the structural properties, stability, elastic properties, elastic anisotropy properties and electronic properties...

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Detalles Bibliográficos
Autores principales: Zhang, Qidong, Zou, Yucong, Fan, Qingyang, Yang, Yintang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7143907/
https://www.ncbi.nlm.nih.gov/pubmed/32178344
http://dx.doi.org/10.3390/ma13061280

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7143907/
https://www.ncbi.nlm.nih.gov/pubmed/32178344
http://dx.doi.org/10.3390/ma13061280

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