Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces

For realization of new informative systems, the memristor working like synapse has drawn much attention. We developed isolated high-density Fe(3)O(4) nanocrystals on Ge nuclei/Si with uniform and high resistive switching performance using low-temperature growth. The Fe(3)O(4) nanocrystals on Ge nucl...

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Detalles Bibliográficos
Autores principales: Ishibe, Takafumi, Maeda, Yoshiki, Terada, Tsukasa, Naruse, Nobuyasu, Mera, Yutaka, Kobayashi, Eiichi, Nakamura, Yoshiaki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2020
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7144302/
https://www.ncbi.nlm.nih.gov/pubmed/32284769
http://dx.doi.org/10.1080/14686996.2020.1736948

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7144302/
https://www.ncbi.nlm.nih.gov/pubmed/32284769
http://dx.doi.org/10.1080/14686996.2020.1736948

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