Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn

Two series of Ge(0.8)Sn(0.2) samples were grown on Ge buffered Si substrate by molecular beam epitaxy (MBE) to investigate the influence of growth temperature and film thickness towards the evolution of surface morphology. A novel phenomena was observed that the Ge(0.8)Sn(0.2) film was segregated an...

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Detalles Bibliográficos
Autores principales: Wang, Nan, Xue, Chunlai, Wan, Fengshuo, Zhao, Yue, Xu, Guoyin, Liu, Zhi, Zheng, Jun, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7145829/
https://www.ncbi.nlm.nih.gov/pubmed/32273570
http://dx.doi.org/10.1038/s41598-020-63152-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7145829/
https://www.ncbi.nlm.nih.gov/pubmed/32273570
http://dx.doi.org/10.1038/s41598-020-63152-y

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