Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga(2)O(3)

Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while maintaining good mobility have been big challenges in wide band...

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Detalles Bibliográficos
Autores principales: Islam, Md Minhazul, Liedke, Maciej Oskar, Winarski, David, Butterling, Maik, Wagner, Andreas, Hosemann, Peter, Wang, Yongqiang, Uberuaga, Blas, Selim, Farida A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7145873/
https://www.ncbi.nlm.nih.gov/pubmed/32273592
http://dx.doi.org/10.1038/s41598-020-62948-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7145873/
https://www.ncbi.nlm.nih.gov/pubmed/32273592
http://dx.doi.org/10.1038/s41598-020-62948-2

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