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Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga(2)O(3)
Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while maintaining good mobility have been big challenges in wide band...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7145873/ https://www.ncbi.nlm.nih.gov/pubmed/32273592 http://dx.doi.org/10.1038/s41598-020-62948-2 |