Exploring an Approach toward the Intrinsic Limits of GaN Electronics

[Image: see text] To fully exploit the advantages of GaN for electronic devices, a critical electric field that approaches its theoretical value (3 MV/cm) is desirable but has not yet been achieved. It is necessary to explore a new approach toward the intrinsic limits of GaN electronics from the per...

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Detalles Bibliográficos
Autores principales: Jiang, Sheng, Cai, Yuefei, Feng, Peng, Shen, Shuoheng, Zhao, Xuanming, Fletcher, Peter, Esendag, Volkan, Lee, Kean-Boon, Wang, Tao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7146752/
https://www.ncbi.nlm.nih.gov/pubmed/32090550
http://dx.doi.org/10.1021/acsami.9b19697

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7146752/
https://www.ncbi.nlm.nih.gov/pubmed/32090550
http://dx.doi.org/10.1021/acsami.9b19697

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