Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

[Image: see text] Over the past two decades, prototype devices for future classical and quantum computing technologies have been fabricated by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scale precision. Despite these succes...

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Detalles Bibliográficos
Autores principales: Stock, Taylor J. Z., Warschkow, Oliver, Constantinou, Procopios C., Li, Juerong, Fearn, Sarah, Crane, Eleanor, Hofmann, Emily V. S., Kölker, Alexander, McKenzie, David R., Schofield, Steven R., Curson, Neil J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7146850/
https://www.ncbi.nlm.nih.gov/pubmed/32142256
http://dx.doi.org/10.1021/acsnano.9b08943

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7146850/
https://www.ncbi.nlm.nih.gov/pubmed/32142256
http://dx.doi.org/10.1021/acsnano.9b08943

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