A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors

Despite sustained research, application of lead halide perovskites in field-effect transistors (FETs) has substantial concerns in terms of operational instabilities and hysteresis effects which are linked to its ionic nature. Here, we investigate the mechanism behind these instabilities and demonstr...

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Detalles Bibliográficos
Autores principales: Senanayak, Satyaprasad P., Abdi-Jalebi, Mojtaba, Kamboj, Varun S., Carey, Remington, Shivanna, Ravichandran, Tian, Tian, Schweicher, Guillaume, Wang, Junzhan, Giesbrecht, Nadja, Di Nuzzo, Daniele, Beere, Harvey E., Docampo, Pablo, Ritchie, David A., Fairen-Jimenez, David, Friend, Richard H., Sirringhaus, Henning
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2020
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7148112/
https://www.ncbi.nlm.nih.gov/pubmed/32300658
http://dx.doi.org/10.1126/sciadv.aaz4948

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7148112/
https://www.ncbi.nlm.nih.gov/pubmed/32300658
http://dx.doi.org/10.1126/sciadv.aaz4948

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