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Border Trap Characterizations of Al(2)O(3)/ZrO(2) and Al(2)O(3)/HfO(2) Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress

This study represents a comparison of the border trap behavior and reliability between HfO(2) and ZrO(2) films on n-In(0.53)Ga(0.47)As with an Al(2)O(3) interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N(2):H(2) mi...

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Detalles Bibliográficos
Autores principales: Rahman, Md. Mamunur, Kim, Dae-Hyun, Kim, Tae-Woo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153472/
https://www.ncbi.nlm.nih.gov/pubmed/32183413
http://dx.doi.org/10.3390/nano10030527