Border Trap Characterizations of Al(2)O(3)/ZrO(2) and Al(2)O(3)/HfO(2) Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress

This study represents a comparison of the border trap behavior and reliability between HfO(2) and ZrO(2) films on n-In(0.53)Ga(0.47)As with an Al(2)O(3) interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N(2):H(2) mi...

Descripción completa

Detalles Bibliográficos
Autores principales: Rahman, Md. Mamunur, Kim, Dae-Hyun, Kim, Tae-Woo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153472/
https://www.ncbi.nlm.nih.gov/pubmed/32183413
http://dx.doi.org/10.3390/nano10030527
Descripción
Sumario:This study represents a comparison of the border trap behavior and reliability between HfO(2) and ZrO(2) films on n-In(0.53)Ga(0.47)As with an Al(2)O(3) interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N(2):H(2) mixed FGA passivates the border trap quite well, whereas N(2)-based RTA performs better on interface traps. Al(2)O(3)/HfO(2) showed more degradation in terms of the threshold voltage shift while Al(2)O(3)/ZrO(2) showed higher leakage current behavior. Moreover, Al(2)O(3)/ZrO(2) showed a higher permittivity, hysteresis, and breakdown field than Al(2)O(3)/HfO(2).

Ejemplares similares