Border Trap Characterizations of Al(2)O(3)/ZrO(2) and Al(2)O(3)/HfO(2) Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress

This study represents a comparison of the border trap behavior and reliability between HfO(2) and ZrO(2) films on n-In(0.53)Ga(0.47)As with an Al(2)O(3) interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N(2):H(2) mi...

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Autores principales: Rahman, Md. Mamunur, Kim, Dae-Hyun, Kim, Tae-Woo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153472/
https://www.ncbi.nlm.nih.gov/pubmed/32183413
http://dx.doi.org/10.3390/nano10030527
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author Rahman, Md. Mamunur
Kim, Dae-Hyun
Kim, Tae-Woo
author_facet Rahman, Md. Mamunur
Kim, Dae-Hyun
Kim, Tae-Woo
author_sort Rahman, Md. Mamunur
collection PubMed
description This study represents a comparison of the border trap behavior and reliability between HfO(2) and ZrO(2) films on n-In(0.53)Ga(0.47)As with an Al(2)O(3) interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N(2):H(2) mixed FGA passivates the border trap quite well, whereas N(2)-based RTA performs better on interface traps. Al(2)O(3)/HfO(2) showed more degradation in terms of the threshold voltage shift while Al(2)O(3)/ZrO(2) showed higher leakage current behavior. Moreover, Al(2)O(3)/ZrO(2) showed a higher permittivity, hysteresis, and breakdown field than Al(2)O(3)/HfO(2).
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spelling pubmed-71534722020-04-20 Border Trap Characterizations of Al(2)O(3)/ZrO(2) and Al(2)O(3)/HfO(2) Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress Rahman, Md. Mamunur Kim, Dae-Hyun Kim, Tae-Woo Nanomaterials (Basel) Article This study represents a comparison of the border trap behavior and reliability between HfO(2) and ZrO(2) films on n-In(0.53)Ga(0.47)As with an Al(2)O(3) interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N(2):H(2) mixed FGA passivates the border trap quite well, whereas N(2)-based RTA performs better on interface traps. Al(2)O(3)/HfO(2) showed more degradation in terms of the threshold voltage shift while Al(2)O(3)/ZrO(2) showed higher leakage current behavior. Moreover, Al(2)O(3)/ZrO(2) showed a higher permittivity, hysteresis, and breakdown field than Al(2)O(3)/HfO(2). MDPI 2020-03-15 /pmc/articles/PMC7153472/ /pubmed/32183413 http://dx.doi.org/10.3390/nano10030527 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Rahman, Md. Mamunur
Kim, Dae-Hyun
Kim, Tae-Woo
Border Trap Characterizations of Al(2)O(3)/ZrO(2) and Al(2)O(3)/HfO(2) Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress
title Border Trap Characterizations of Al(2)O(3)/ZrO(2) and Al(2)O(3)/HfO(2) Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress
title_full Border Trap Characterizations of Al(2)O(3)/ZrO(2) and Al(2)O(3)/HfO(2) Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress
title_fullStr Border Trap Characterizations of Al(2)O(3)/ZrO(2) and Al(2)O(3)/HfO(2) Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress
title_full_unstemmed Border Trap Characterizations of Al(2)O(3)/ZrO(2) and Al(2)O(3)/HfO(2) Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress
title_short Border Trap Characterizations of Al(2)O(3)/ZrO(2) and Al(2)O(3)/HfO(2) Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress
title_sort border trap characterizations of al(2)o(3)/zro(2) and al(2)o(3)/hfo(2) bilayer films based on ambient post metal annealing and constant voltage stress
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153472/
https://www.ncbi.nlm.nih.gov/pubmed/32183413
http://dx.doi.org/10.3390/nano10030527
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