Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by f...

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Detalles Bibliográficos
Autores principales: Tiagulskyi, Stanislav, Yatskiv, Roman, Faitová, Hana, Kučerová, Šárka, Roesel, David, Vaniš, Jan, Grym, Jan, Veselý, Jozef
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153476/
https://www.ncbi.nlm.nih.gov/pubmed/32168923
http://dx.doi.org/10.3390/nano10030508

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7153476/
https://www.ncbi.nlm.nih.gov/pubmed/32168923
http://dx.doi.org/10.3390/nano10030508

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