Broadband, wide-angle antireflection in GaAs through surface nano-structuring for solar cell applications

We demonstrate broadband and wide-angle antireflective surface nanostructuring in GaAs semiconductors using variable dose electron-beam lithography (EBL). Various designed structures are written with EBL on a positive EB-resist coated GaAs and developed followed by shallow inductively coupled plasma...

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Detalles Bibliográficos
Autores principales: Behera, Saraswati, Fry, Paul W., Francis, Henry, Jin, Chao-Yuan, Hopkinson, Mark
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7156764/
https://www.ncbi.nlm.nih.gov/pubmed/32286418
http://dx.doi.org/10.1038/s41598-020-63327-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7156764/
https://www.ncbi.nlm.nih.gov/pubmed/32286418
http://dx.doi.org/10.1038/s41598-020-63327-7

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