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Broadband, wide-angle antireflection in GaAs through surface nano-structuring for solar cell applications

We demonstrate broadband and wide-angle antireflective surface nanostructuring in GaAs semiconductors using variable dose electron-beam lithography (EBL). Various designed structures are written with EBL on a positive EB-resist coated GaAs and developed followed by shallow inductively coupled plasma...

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Detalles Bibliográficos
Autores principales: Behera, Saraswati, Fry, Paul W., Francis, Henry, Jin, Chao-Yuan, Hopkinson, Mark
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7156764/
https://www.ncbi.nlm.nih.gov/pubmed/32286418
http://dx.doi.org/10.1038/s41598-020-63327-7
Descripción
Sumario:We demonstrate broadband and wide-angle antireflective surface nanostructuring in GaAs semiconductors using variable dose electron-beam lithography (EBL). Various designed structures are written with EBL on a positive EB-resist coated GaAs and developed followed by shallow inductively coupled plasma etching. An optimized nanostructured surface shows a reduced surface reflectivity down to less than 2.5% in the visible range of 450–700 nm and an average reflectance of less than 4% over a broad near-infrared wavelength range from 900–1400 nm. The results are obtained over a wide incidence angle of 33.3°. This study shows the potential for anti-reflective structures using a simpler reverse EBL process which can provide optical absorption or extraction efficiency enhancement in semiconductors relevant to improved performance in solar photovoltaics or light-emitting diodes.