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Broadband, wide-angle antireflection in GaAs through surface nano-structuring for solar cell applications
We demonstrate broadband and wide-angle antireflective surface nanostructuring in GaAs semiconductors using variable dose electron-beam lithography (EBL). Various designed structures are written with EBL on a positive EB-resist coated GaAs and developed followed by shallow inductively coupled plasma...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7156764/ https://www.ncbi.nlm.nih.gov/pubmed/32286418 http://dx.doi.org/10.1038/s41598-020-63327-7 |