Dataset for the comparison of vacuum-treated and as-etched porous silicon samples in terms of the evolution of oxidation at low temperatures

The development of chemical sensors made from porous silicon is a task that has been addressed for several years. In order to have a reliable sensing material, stability must be guaranteed. Oxidation in silicon degrades the sensing capability. The data presented in this article provides some important insights concerning the treatment of samples that can improve the material stability against oxidation. For this purpose, Fourier Transformed Infrared (FTIR) measurements using an Attenuated Total Reflectance (ATR) additament were employed to extract information concerning oxidation on the samples submitted to different temperatures. Photoluminescent (PL) measurements were also performed on the samples in order to extract information on nanocrystals sizes and their relationship with oxidation.