High mobility approaching the intrinsic limit in Ta-doped SnO(2) films epitaxially grown on TiO(2) (001) substrates

Achieving high mobility in SnO(2), which is a typical wide gap oxide semiconductor, has been pursued extensively for device applications such as field effect transistors, gas sensors, and transparent electrodes. In this study, we investigated the transport properties of lightly Ta-doped SnO(2) (Sn(1...

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Detalles Bibliográficos
Autores principales: Fukumoto, Michitaka, Nakao, Shoichiro, Shigematsu, Kei, Ogawa, Daisuke, Morikawa, Kazuo, Hirose, Yasushi, Hasegawa, Tetsuya
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7176643/
https://www.ncbi.nlm.nih.gov/pubmed/32321972
http://dx.doi.org/10.1038/s41598-020-63800-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7176643/
https://www.ncbi.nlm.nih.gov/pubmed/32321972
http://dx.doi.org/10.1038/s41598-020-63800-3

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