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High mobility approaching the intrinsic limit in Ta-doped SnO(2) films epitaxially grown on TiO(2) (001) substrates
Achieving high mobility in SnO(2), which is a typical wide gap oxide semiconductor, has been pursued extensively for device applications such as field effect transistors, gas sensors, and transparent electrodes. In this study, we investigated the transport properties of lightly Ta-doped SnO(2) (Sn(1...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7176643/ https://www.ncbi.nlm.nih.gov/pubmed/32321972 http://dx.doi.org/10.1038/s41598-020-63800-3 |