Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalabili...

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Detalles Bibliográficos
Autores principales: Zahoor, Furqan, Azni Zulkifli, Tun Zainal, Khanday, Farooq Ahmad
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7176808/
https://www.ncbi.nlm.nih.gov/pubmed/32323059
http://dx.doi.org/10.1186/s11671-020-03299-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7176808/
https://www.ncbi.nlm.nih.gov/pubmed/32323059
http://dx.doi.org/10.1186/s11671-020-03299-9

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